Crystalline micrometer-long YSi2 nanowires with cross sections as small as 1 × 0.5 nm2 can be grown on the Si(001) surface. Their extreme aspect ratios make electron conduction within these nanowires almost ideally one-dimensional, while their compatibility ...
The addition of the valley degree of freedom to a two-dimensional spin-polarized electronic system provides the opportunity to multiply the functionality of next-generation devices. So far, however, such devices have not been realized due to ...
We investigate the atomic-scale tunneling characteristics of bilayer graphene on silicon carbide using the scanning tunneling microscopy. The high-resolution tunneling spectroscopy reveals an unexpected negative differential resistance (NDR) at the Dirac energy, which spatially varies ...
We investigated phase defects in a quasi-one-dimensional commensurate charge-density wave (CDW) system, an In atomic wire array on Si(111), using low temperature scanning tunneling microscopy. The unique fourfold degeneracy of the CDW state leads to ...
The wide variety of nanoscale structures and devices demands novel tools for handling, assembly, and fabrication at nanoscopic positioning precision. The manipulation tools should allow for in situ characterization and testing of fundamental building blocks, such as nanotubes and ...
Quantum wires, as a smallest electronic conductor, are expected to be a fundamental component in all quantum architectures. The electronic conductance in quantum wires, however, is often dictated by structural instabilities and electron localization at ...
We studied Fe double layer films on W(110) to investigate the role of strain relaxation in determination of the magnetic ground states. The spin reorientation transition (SRT) between perpendicular and in-plane magnetization takes place with varying density of dislocation lines as ...
We report the direct measurement of individual grain boundary (GB) resistances and the critical role of GB structure in the increased resistivity in copper nanowires. By measuring both intra- and inter-grain resistance with a four-probe ...
The recent Letter by Zhang et al.[1] reported on a local defect structure for the charge density wave (CDW) along In wires formed on Si(111) [2,3]. This work interpreted the defect as the soliton excitation and addressed its atomic ...
Complex nanostructures such as branched semiconductor nanotetrapods are promising building blocks for next-generation nanoelectronics. Here we report on the electrical transport properties of individual CdS tetrapods in a field effect transistor (FET) configuration with a ...
